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HOA1180
Reflective Sensor
FEATURES * Choice of phototransistor or photodarlington output
* High sensitivity * Wide operating temperature range (- 55C to +100C) * 12.0 in.(305 mm) min. 28 AWG PVC insulated wire leads
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DESCRIPTION The HOA1180 series consists of an infrared emitting diode and an NPN silicon phototransistor (HOA1180- 001, - 002) or photodarlington (HOA1180- 003), encased side- by- side on converging optical axes in a black thermoplastic housing. The detector responds to radiation from the IRED only when a reflective object passes within its field of view. The HOA1180 series employs metal can packaged components. For additional component information see SE1450, SD1440, and SD1410. Housing material is polyester. Housings are soluble in chlorinated hydrocarbons and ketones. Recommended cleaning agents are methanol and isopropanol. Wire color code and functions are: All devices IRED anode - Red IRED cathode - Black HOA1180-001 Collector - Brown Emitter - Black HOA1180-002 Collector - Orange Emitter - Black HOA1180-003 Collector - Yellow Emitter - Black
OUTLINE DIMENSIONS in inches (mm) Tolerance 3 plc decimals 0.010(0.25) 2 plc decimals 0.020(0.51)
.250(6.35) .070(1.78) .625(15.88) .450(11.43) 12.0(304.8) MIN .50(12.7) TEST SURFACE .250(6.35 .062(1.60)R 2 PLCS .040(1.02) .187(4.75)
.150(3.81)
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236
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Honeywell reserves the right to make changes in order to improve design and supply the best products possible.
HOA1180
Reflective Sensor
ELECTRICAL CHARACTERISTICS PARAMETER IR EMITTER SYMBOL MIN TYP MAX UNITS TEST CONDITIONS
DETECTOR
COUPLED CHARACTERISTICS
ABSOLUTE MAXIMUM RATINGS
(25C Free-Air Temperature unless otherwise noted) Operating Temperature Range Storage Temperature Range Soldering Temperature (5 sec) IR EMITTER Power Dissipation Reverse Voltage Continuous Forward Current DETECTOR Collector-Emitter Voltage Emitter-Collector Voltage Power Dissipation Collector DC Current -55C to 100C -55C to 125C 240C 75 mW [A] 3V 50 mA TRANS. 30 V 5V 75 mW [A] 30 mA
SCHEMATIC
DARLINGTON 15 V 5V 75 mW [A] 30 mA
Honeywell reserves the right to make changes in order to improve design and supply the best products possible.
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HOA1180
Reflective Sensor
Fig. 1 IRED Forward Bias Characteristics
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Fig. 2
Non-Saturated Switching Time vs Load Resistance
1000
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100 90 80 70 60 50 40 30 20 10 0 0.8
Forward current - mA
Response time - s
Pulsed condition TA = 80C TA = 25C TA = -40C
1.0 1.2 1.4 1.6 1.8 2.0
100
Photodarlington
10
Phototransistor
1 10 100 1000 10000
Forward voltage - V
Fig. 3 Dark Current vs Temperature Fig. 4
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Load resistance - Ohms
Collector Current vs Ambient Temperature
1.2 1.0 0.8 0.6 0.4 0.2 0.0 -50 -25 0 25 50 75 100
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Normalized collector current
Free-air temperature - C
Fig. 5 Collector Current vs Distance to Reflective Surface
1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 0.00 0.10
Fig. 6
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Collector Current vs IRED Forward Current
1.80 1.60 1.40 1.20 1.00 0.80 0.60 0.40 0.20 0.00 0 10 20 30 40
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Normalized collector current
Normalized collector current
IF = 30 mA VCE = 5.0 V
VCE = 5 V d = 0.5 in.
0.20
0.30
0.40
0.50
0.60
50
Distance to reflective surface - inches
All Performance Curves Show Typical Values
IRED forward current - mA*
238
h
Honeywell reserves the right to make changes in order to improve design and supply the best products possible.
HOA1180
Reflective Sensor
Honeywell reserves the right to make changes in order to improve design and supply the best products possible.
h
239

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